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We present a photonically driven on-chip millimeter wave (mmWave) source enabled by the heterogeneous integration of a high-speed InGaAs/InP photodiode and silicon nitride (Si3N4) microcavity solitons. The chip delivers mmWaves with −18dBm of electrical power at a frequency of 98 GHz with kHz-class linewidth and low phase noise and marks a significant advancement in on-chip photonic mmWave source performance. This breakthrough not only demonstrates capabilities of heterogeneous photonic integration but also offers a compact and scalable solution for future low-noise mmWave applications in communications and sensing technologies.more » « less
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Tabatabaei, Fatemehsadat; Gao, Junyi; Guo, Xiangwen; Beling, Andreas (, Optica Publishing Group)We demonstrate InGaAs/InAlGaAs/InP waveguide photodiodes on Si3N4with up to 81 GHz 3-dB bandwidth, 0.76 A/W responsivity, and -1.8 dBm and -9 dBm output RF power at 50 GHz and 100 GHz, respectively.more » « less
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Gao, Junyi; Tzu, Ta Ching; Fatema, Tasneem; Guo, Xiangwen; Yu, Qianhuan; Navickaite, Gabriele; Zervas, Michael; Geiselmann, Michael; Beling, Andreas (, 2023 Optical Fiber Communications Conference and Exhibition (OFC))We demonstrate InGaAs/InP balanced photodiodes onSi3N4waveguides with record-high 3-dB bandwidth of 30 GHz, 0.72 A/W responsivity, and high common mode rejection ratio (CMRR) of 26 dB at 30 GHz.more » « less
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